S. Okada, N. Ohkawa, K. Moriya, Y. Saitoh, M. Ishikawa, K. Oya, A. Nishikawa, H. Sekiguchi, “Photopharmacological modulation of hippocampal local fieldpotential by caged-glutamate with MicroLED probe”, Neuropsychopharmacol. Rep., 44, 658 (2024). https://doi.org/10.1002/npr2.12472
R. Kanda, T. Kitade, A. Nishikawa, A. Loesing, H. Sekiguchi, “Fabrication Process of MicroLED Film for Achieving Vertical Current Injection Using Transfer Technology”, Phys. Stat. Sol. A, 2024, 2400051 (2024) https://doi.org/10.1002/pssa.202400051
T. Kitade, R. Kanda, K. Matsui, A. Nishikawa, A. Loesing, I. Fukunaga, H. Sekiguchi, “Optimization of Gate Structure for Damageless MicroLED Thin Films in Optogenetic Applications”, Phys. Stat. Sol. A, 2024, 2300834 (2024). https://doi.org/10.1002/pssa.202300834
M. Yamaga, K. P. O’Donnell, H. Sekiguchi, A. Wakahara, “Crystal-field analysis and models of Eu-emission centers with C3v symmetry in situ Eu- and Mg-codoping GaN layers”, J. Lumin, 262, 119953 (2023). https://doi.org/10.1016/j.jlumin.2023.119953
S. Setogawa, R. Kanda, S. Tada, T. Hikima, Y. Saitoh, M. Ishikawa, S. Nakada, F. Seki, K. Hikishima, H. Matsumoto, K. Mizuseki, O. Fukayama, M. Osanai, H. Sekiguchi, N. Ohkawa, “A novel micro-ECoG recording method for recording multisensory neural activity from the parietal to temporal cortices in mice”, Mol. Brain 16, 38 (2023). https://doi.org/10.1186/s13041-023-01019-9
■2022年
H. Yasunaga, H. Takeuchi, K. Mizuguchi, A. Nishikawa, A. Loesing, M. Ishikawa, C. Kamiyoshihara, S. Setogawa, N. Ohkawa, and H. Sekiguchi, “MicroLED neural probe for effective in vivo optogenetic stimulation”, Opt. Express 30, 40292-40305 (2022). https://doi.org/10.1364/OE.470318
S. Setogawa, R. Kanda, S. Tada, Y. Saitoh, M. Ishikawa, S. Nakada, F. Seki, K. Hikishima, H. Matsumoto, K. Mizuzeki, O. Fukayama, M. Osanai, H. Sekiguchi, N. Ohkawa, “A novel micro-ECoG recording method for recording multisensory neural activity from the parietal to temporal cortices in mice”, bioRxiv (2022). https://doi.org/10.1101/2022.10.01.510247
T. Okuno, R. Onoda, L. Toyoshima, K. Miyata, H. Sekiguchi, A. Wakahara, T. Nakaoka, “Local strain-dependent Zeeman splitting in GaN:Eu”, AIP Adv., 12, 075315 (2022). https://doi.org/10.1063/5.0097267
H. Sekiguchi, H. Matsuhira, R. Kanda, S. Tada, T. Kitade, M. Tsutsumi, A. Nishikawa, A. Loesing, I. Fukunaga, S. Setogawa and N. Ohkawa, “Adhesionable flexible GaN-based microLED array film to brain surface for in vivo optogenetic stimulation”, Appl. Phys. Express, 15, 046501 (2022). https://doi.org/10.35848/1882-0786/ac5ba3
■2021年
H. Yasunaga, T.Takagi, D. Shinko, Y. Nakayama, Y. Takeuchi, A. Nishikawa, A. Loesing, M. Ohsawa and H. Sekiguchi，“Development of a neural probe integrated with high-efficiency MicroLEDs for in vivo application“，Japanese Journal of Applied Physics，60，016503 (2021). https://doi.org/10.35848/1347-4065/abcffa
■2020年
H. Okada, K. Miwa, T. Yokoyama, K. Yamane, A. Wakahara, H. Sekiguchi, “GaN-Based Monolithic Inverter Consiting of Enhancement- and Depletion-Mode MOSFETs by Si ion”, Phys. Stat. Sol. A 1900550-1-8 (2020). https://doi.org/10.1002/pssa.201900550
■2019年
H.Sekiguchi, H. Yasunaga, K. Tsuchiyama, R. Nitta, “Neural optical probe with monolithically integrated intensity-monitoring µLED and polymer waveguide for optogenetics”, Electronics Letters, 55, 619 (2019). https://doi.org/10.1049/el.2019.0300
H.Sekiguchi, M. Sakai, T. Kamada, K. Yamane, H. Okada, and A. Wakahara, “Observation of single optical site of Eu and Mg codoped GaN grown by NH3-source molecular beam epitaxy”, J. Appl. Phys. 125, 175702 (2019). https://doi.org/10.1063/1.5090893
H. Sekiguchi, Y. Higashi, K. Yamane, A. Wakahara, H. Okada, and K. Kishino, “Fabrication and optical properties of regularly arranged GaN-based nanocolumns on Si substrate”, J. Vac. Sci. Tech. B, 37, 031207 (2019). https://doi.org/10.1116/1.5088160
J. A. Piedra-Lorenzana, K. Yamane, K. Shiota, J. Fujimoto, S. Tanaka, H. Sekiguchi, H. Okada, A. Wakahara, “Estimation of Ga adatom diffusion length for GaP growth by molecular beam epitaxy”, J.Cryst. Growth, 512, 37-40 (2019). https://doi.org/10.1016/j.jcrysgro.2019.02.008
H. Sekiguchi, K. Date, T. I manishi, H. Tateishi, K. Yamane, H. Okada, K. Kishino, A. Wakahara, “Regularly arranged Eu-doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy through Ti-mask selective-area growth technique”, J. Cryst. Growth, 511, 73-78 (2019). https://doi.org/10.1016/j.jcrysgro.2019.01.032
A. Sukegawa, H. Sekiguchi, R. Matsuzaki, K. Yamane, H. Okada, K. Kishino, and A. Wakahara, “Self-organized Eu doped GaN nanocolumn light-emitting diode grown by RF-molecular-beam epitaxy”, Phys. Stat. Sol. A, 216, 1800501 (2019). https://doi.org/10.1002/pssa.201800501
■2018年
K. Yamane, S. Mugikura, S. Tanaka, H. Sekiguchi, H. Okada, A. Wakahara, “Impact of temperature and nitrogen composition on the growth of GaAsPN alloys”, J. Cryst. Growth, 486, 24-29 (2018). https://doi.org/10.1016/j.jcrysgro.2018.01.006
■2017年
K. Yamane, K. Sato, H. Sekiguchi, H. Okada, A. Wakahara, “Doping control of SaAsPN alloys by molecular beam epitaxy for monolithic II-V/Si tandem solar cells”, J. Cryst. Growth, 473, 55-59 (2017). https://doi.org/10.1016/j.jcrysgro.2017.05.025
K. Yamane, M. Goto, K. Takahashi, H. Sekiguchi, H. Okada, A. Wakahara, “Growth of a lattice-matched GaAsPN P-I-N junction on a Si substrate for monolithic III-V/Si tandem solar cells”, Appl. Phys. Express, 10, 075504 (2017). https://doi.org/10.7567/apex.10.075504
K. Yamane, M. Moriyama, K. Boualiong, H. Sekiguchi, H. Okada, A. Wakahara, “Metal-organic vapor phase epitaxy of GaPN alloys via surface nitridation using ammonia”, Phys. Stat. Sol. (B), 254, 1600483 (2017). https://doi.org/10.1002/pssb.201600483
H. Okada, M. Baba, M. Furukawa, K. Yamane, H. Sekiguchi, A. Wakahara, “Formation of SiO2 film by chemical capor deposition enhaced by atomic species extracted from a surface-wave generated plasma”, AIP Conference Proceedings, 1807, 020006 (2017) https://doi.org/10.1063/1.4974788
H. Oktavianto, K. Yamane, H. Sekiguchi, T. Hizawa, A. Wakahara, “Hydrogen flame with bioinspired optoelectronic integrated circuit and field-programmable gate array using integrated three-dimensional system architecture”, Sens. Mater., 29, 587-600 (2017). https://doi.org/10.18494/sam.2017.1569
H. Sekiguchi, T. Imanishi, R. Matsuzaki, K. Ozaki, K. Yamane, H. Okada, K. Kishino, A. Wakahara, “Stable-wavelength operation of europium-doped GaN nanocolumn light-emitting diodes grown by rf-plasma-assisted molecular beam epitaxy”, Electron. Lett. 53, 666-668 (2017). https://doi.org/10.1049/el.2017.0447
■2016年
H. Sekiguchi, M. Sakai, T. Kamada, H. Tateishi, A. Syouji and A. Wakahara, “Optical sites in Eu- and Mg-codoped GaN grown by NH3-source molecular beam epitaxy”, Appl. Phys. Lett. 109, 151106 (2016). https://doi.org/10.1063/1.4964519
K. Tsuchiyama, K. Yamane, S. Utsunomiya, H. Sekiguchi, H. Okada, A. Wakahara, “Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED wafer”, Appl. Phys. Express, 9, 104101 (2016). https://doi.org/10.7567/apex.9.104101
H. Sekiguchi, S. Nishikawa, T. Imanishi, K. Ozaki, K. Yamane, H. Okada, K. Kishino, A. Wakahara, “Structural and optical properties of Eu-doped GaN nanocolumns on (111) Si substrates grown by RF-plasma-assisted molecular beam epitaxy”, Japanese Journal of Applied Physics, 55, 05FG07 (2016). https://doi.org/10.7567/jjap.55.05fg07
N. Urakami, K. Yamane, H. Sekiguchi, H. Okada, A. Wakahara, “Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation”, J. Cryst. Growth, 435, 19-23 (2016). https://doi.org/10.1016/j.jcrysgro.2015.11.011
K. Tsuchiyama, K. Yamane, H. Sekiguchi, H. Okada, A. Wakahara, “Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices”, Japanese Journal of Applied Physics, 55, 05FL01 (2016). https://doi.org/10.7567/jjap.55.05fl01
H. Okada, M. Shinohara, Y. Kondo, H. Sekiguchi, K. Yamane, A. Wakahara, “Investigation of HCl-based surface treatment for GaN devices”, AIP Conference Proceedings, 1709, 020011 (2016). https://doi.org/10.1063/1.4941210
N. Urakami, K. Yamane, H. Sekiguchi, H. Okada, A. Wakahara, “Molecular-beam epitaxy growth of dilute GaAsN allys by surface nitridation”, Journal of Crystal Growth, 435, 19 (2016) . https://doi.org/10.1016/j.jcrysgro.2015.11.011
■2015年
M. Kanemoto, H. Sekiguchi, K.Yamane, H.Okada, A.Wakahara, “Eu3+ luminescence properties of Eu- and Mg-codoped AlGaN”, Journal of Luminescence, 166, 60-66 (2015). https://doi.org/10.1016/j.jlumin.2015.04.036
K.Yamano, K.Kishino, H.Sekiguchi, T.Oto, A.Wakahara, Y.Kawakami, “Novel selective area growth method for regularly arranged AlGaN nanocolumns using nanotemplates”, Journal of Crystal Growth, 425, 316 (2015) . https://doi.org/10.1016/j.jcrysgro.2015.02.051
H. Oktavianto, K. Yamane, H. Sekiguchi, A. Wakahara, “Solar-blind focal plane array photodetectors for massive parallel processing application based on optoelectronic integrated circuit and field-programmable gate array”, Sensor. Mater. 27 1009 (2015). https://doi.org/10.18494/sam.2015.1138
■2014年
K.Yamane, N.Urakami, H.Sekiguchi, A.Wakahara, “III-V-N compounds for multi-junction solar cells on Si”, IEEE Photovoltaic Specialist Conference, 2972 (2014) . https://doi.org/10.1109/pvsc.2014.6925509
H.Okada, Y.Okada, H.Sekiguchi, A.Wakahara, S.Sato, T.Ohshima, “Study of proton irradiation effects on p- and n-type GaN based on two-terminal resistance dependence on 380 keV proton fluence”, IEICE Transactions on Electronics, E97-C, 409 (2014). https://doi.org/10.1587/transele.e97.c.409
■2013年
N.Urakami, H.Sekiguchi, H.Okada, and A.Wakahara, “Growth of dilute BGaP allloys by molecular beam epitaxy”, Journal of Crystal Growth, 378, 96 (2013). https://doi.org/10.1016/j.jcrysgro.2012.12.115
C.Y.Lee, H.Sekiguchi, H.Okada, A.Wakahara, “Demonstration of a large-area AlGaN/GaN Schottky barrier photodetector on Si with high detection limit”, Semiconductor Science and Technology, 28, 094005 (2013). https://doi.org/10.1088/0268-1242/28/9/094005
