ハワイ州ホノルルで開催された窒化物半導体国際会議 12th International Workshop on Nitride Semiconductors (IWN 2024)にて研究成果を発表しました。
456
X-ray Nanobeam Diffraction of a Single GaN-based 5-quantum Shells on a GaN Substrate Extracted by using Focused-ion-beam Microsampling
Takao Miyajima1, Shoya Ota1, Ryota Kobayashi1, Nobuhiro Yasuda2, Tomoyo Nakao3, Shigeo Arai3, Kazuki Nishimura1, Koki Aoyama1, Kazushi Sumitani2, Yasuhiro Imai2, Shigeru Kimura2, Satoshi Kamiyama1, Daichi Imai1
1 Meijo University, Nagoya, Aichi, Japan. 2 JASRI, Sayo, Hyogo, Japan. 3 Nagoya University, Nagoya, Aichi, Japan
502
Optical characterizations of in-gap states in GaN-based tunnel junctions
Daichi Imai, Hayato Ichikawa, Hinata Uda, Motoki Kondo, Tetsuya Takeuchi, Takao Miyajima
Meijo University, Nagoya, Aichi, Japan